US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 18 for "Semiconductor device and manufacturing method thereof" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,810, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Chun-Chieh Lu (Taipei, Taiwan), Carlos H. Diaz (Mountain View, Calif.), Chih-Sheng Chang (Hsinchu, Taiwan), Cheng-Yi Peng (Taipei, Taiwan) and Ling-Yen Yeh (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a negative capacitance structure, a dielectric layer is formed over a substrate. A first metallic layer is formed over the dielectric layer. After the first metallic layer is formed, an annealing operation is performed, followed ...