ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,807, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device and a method for fabricating the same" was invented by Chia-Ming Hsu (Hualien County, Taiwan), Pei-Yu Chou (Hsinchu County, Taiwan), Chih-Pin Tsao (Zhubei, Taiwan), Kuang-Yuan Hsu (Taichung, Taiwan) and Jyh-Huei Chen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. The first contact includes a first metal layer, an upper sur...