US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 18 for "Planarization structure for MIM topography" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,182, issued on Nov. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Planarization structure for MIM topography" was invented by Liang-Shiuan Peng (Taipei, Taiwan) and Chih-Hung Lu (Zhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to an integrated chip including a first metal insulator metal (MIM) capacitor disposed over a substrate. The integrated chip further includes a second MIM capacitor disposed over the substrate. The first MIM capacitor has a first outer sidewall facing a second outer sidewall of the second MIM capacitor. A dielectric structure is arranged over...