US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 18 for "Nanostructure field-effect transistor device and method of forming" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,775, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Nanostructure field-effect transistor device and method of forming" was invented by Chun-Ming Lung (Hsinchu, Taiwan), Che-Hao Chang (Hsinchu, Taiwan), Zhen-Cheng Wu (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes: forming a fin structure protruding above a substrate, where the fin structure includes a fin and a layer stack over the fin, the layer stack comprising alternating layers of a first semiconductor material and a second semiconductor mater...