US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 18 for "Method to enlarge an opening in air gap formation" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,137, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method to enlarge an opening in air gap formation" was invented by Lin-Chen Lu (Kaohsiung, Taiwan) and Tsung-Han Tsai (Miaoli, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and methods of forming the same are described. In some embodiments, the structure includes a device and a first dielectric layer disposed over the device. An airgap is located in the first dielectric layer. The structure further includes a conductive feature disposed in the first dielectric layer, and the first dielectric layer inclu...