US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 18 for "Method of manufacturing a source/drain of a semiconductor device using multiple implantation processes" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,764, issued on Nov. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of manufacturing a source/drain of a semiconductor device using multiple implantation processes" was invented by Yu-Chang Lin (Hsinchu, Taiwan), Liang-Yin Chen (Hsinchu, Taiwan), Chun-Feng Nieh (Hsinchu, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of forming the same are provided. The method includes forming a semiconductor fin extending from a substrate. A dummy gate stack is formed over the semiconductor fin. The dummy gate st...