US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 18 for "Method of manufacturing a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,107, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device" was invented by Chieh-Hsin Hsieh (Hsinchu, Taiwan), Wei-Han Lai (New Taipei, Taiwan) and Ching-Yu Chang (Yuansun Village, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a protective layer over a substrate. The hydrophilicity of the protective layer is reduced. A resist layer is formed over the protective layer, and the resist layer is patterned. The hydrophilicity of the protective layer can be reduced by applying an ethylen...