US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 18 for "Method of forming phase-change memory layers on recessed electrodes" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,961, issued on Nov. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming phase-change memory layers on recessed electrodes" was invented by Jau-Yi Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device and a method of forming same are provided. The device includes a substrate, a first dielectric layer over the substrate, a bottom electrode extending through the first dielectric layer, a phase-change layer over the bottom electrode, and a top electrode over the phase-change layer. The phase-change layer includes a first portion extending into the bottom electrode and a second porti...