US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 18 for "Method of forming memory cell" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,746, issued on Nov. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming memory cell" was invented by Yuan-Tai Tseng (Zhubei, Taiwan), Chung-Chiang Min (Zhubei, Taiwan) and Shih-Chang Liu (Alian Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor device. The semiconductor device includes a first dielectric layer having a first region and a second region. A bottom electrode is at least partially arranged within the first region of the first dielectric layer. A memory element is over the bottom electrode and a top electrode is over the memory...