ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,756, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Metal-insulator-metal structure and methods of fabrication thereof" was invented by Chih-Fan Huang (Kaohsiung, Taiwan), Hung-Chao Kao (Taipei, Taiwan), Yuan-Yang Hsiao (Taipei, Taiwan), Tsung-Chieh Hsiao (Changhua County, Taiwan), Hsiang-Ku Shen (Hsinchu, Taiwan), Hui-Chi Chen (Hsinchu County, Taiwan), Dian-Hau Chen (Hsinchu, Taiwan) and Yen-Ming Chen (Hsin-Chu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure is directed to a semiconductor device. The semiconductor device includes a multi-layer interconnect stru...