US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 18 for "Metal gates for multi-gate semiconductor devices and method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,813, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Metal gates for multi-gate semiconductor devices and method thereof" was invented by Chih-Wei Lee (New Taipei, Taiwan), Jo-Chun Hung (Hsinchu, Taiwan), Wen-Hung Huang (Hsin-Chu, Taiwan), Jian-Hao Chen (Hsinchu, Taiwan) and Kuo-Feng Yu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a structure having a first stack of nanostructures spaced vertically one from another and a second stack of nanostructures spaced vertically one from another, forming a dielectric layer wrapping around each of the n...