US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 18 for "Memory structure and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,712, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory structure and method for manufacturing the same" was invented by Hung-Ju Chou (Taipei, Taiwan) and Yuan-Ching Peng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure includes a first pull-up (PU) transistor and a first pull-down (PD) transistor sharing a first gate structure extending in a first direction, and a second PU transistor and a second PD transistor sharing a second gate structure extending in the first direction. The first gate structure has a first PU portion that corresponds with the first PU...