US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 18 for "Memory device and method of manufacturing the same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,726, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device and method of manufacturing the same" was invented by Hau-Yan Lu (Hsinchu, Taiwan), Chun-Yao Ko (Hsinchu, Taiwan) and Felix Ying-Kit Tsui (Cupertino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is disclosed. The memory device includes: a first memory cell, including: a first transistor; a second transistor; and a first capacitor; a second memory cell, including: a third transistor; a fourth transistor; and a second capacitor; a third memory cell, including: a fifth transistor; a sixth transistor; and a t...