ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,747, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Memory device" was invented by Jau-Yi Wu (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a bottom electrode, a selector, a memory layer, and a top electrode. The selector is over the bottom electrode. A sidewall of the bottom electrode and a sidewall of the selector are coterminous. The memory layer is formed over the selector and has a width greater than a width of the selector. A top electrode is formed over the memory layer."
The patent was filed on July 22, 2022, under Application No. 17/871,813...