US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 18 for "Integrated circuit structure with complementary field effect transistor and memory cell and method of making thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,475,942, issued on Nov. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integrated circuit structure with complementary field effect transistor and memory cell and method of making thereof" was invented by Hung-Li Chiang (Taipei, Taiwan), Jer-Fu Wang (Taipei, Taiwan) and Iuliana Radu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a semiconductor die are provided. The memory device includes: a non-volatile storage device, with a first terminal coupled to a bit line; and an access transistor, configured to control electrical connection between a second terminal of the non-vola...