ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,811, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"High-k gate dielectric" was invented by Chia-Hao Pao (Kaohsiung, Taiwan), Chih-Hsuan Chen (Hsinchu, Taiwan) and Yu-Kuan Lin (Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods are provided. A semiconductor device according to the present disclosure includes a first transistor having a first gate dielectric layer, a second transistor having a second gate dielectric layer, and a third transistor having a third gate dielectric layer. The first gate dielectric layer includes a first concentration of a dipol...