US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 18 for "FinFET device having a channel defined in a diamond-like shape semiconductor structure" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,765, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"FinFET device having a channel defined in a diamond-like shape semiconductor structure" was invented by You-Ru Lin (New Taipei, Taiwan), Cheng-Hsien Wu (Hsinchu, Taiwan), Chih-Hsin Ko (Fongshan, Taiwan) and Clement Hsingjen Wann (Carmel, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has ...