US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 18 for "Fin field effect transistor (FinFET) device structure with interconnect structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,141, issued on Nov. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin field effect transistor (FinFET) device structure with interconnect structure" was invented by Che-Cheng Chang (New Taipei, Taiwan) and Chih-Han Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first metal layer formed over a substrate and a dielectric layer formed over the first metal layer. The semiconductor device structure further includes an adhesion layer formed in the dielectric layer and over t...