US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 18 for "Epitaxial structure for source/drain contact for semiconductor structure having fin structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,778, issued on Nov. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Epitaxial structure for source/drain contact for semiconductor structure having fin structure" was invented by Tsungyu Hung (Hsinchu, Taiwan), Pang-Yen Tsai (Hsin-Chu Hsian, Taiwan), Ding-Kang Shih (New Taipei, Taiwan), Sung-Li Wang (Hsinchu, Taiwan) and Chia-Hung Chu (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Low-resistance contacts improve performance of integrated circuit devices that feature epitaxial source/drain regions. The low resistance contacts can be used with transistors of various types, including planar field effe...