US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 18 for "Embedded memory device with reduced plasma-induced damage and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,207, issued on Nov. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Embedded memory device with reduced plasma-induced damage and methods of forming the same" was invented by Harry-Hak-Lay Chuang (Zhubei, Taiwan), Hung Cho Wang (Taipei, Taiwan) and Wen-Chun You (Dongshan Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and methods of fabrication thereof including a substrate, a doped well formed in the substrate, a transistor formed on the substrate, a dielectric material located over the doped well and the transistor and including interconnect structures extending through the...