US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 18 for "Dipoles in semiconductor devices" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,784, issued on Nov. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dipoles in semiconductor devices" was invented by Hsiang-Pi Chang (New Taipei, Taiwan), Yen-Tien Tung (Hsinchu, Taiwan), Dawei Heh (Hsinchu, Taiwan), Chung-Liang Cheng (Changhua County, Taiwan), I-Ming Chang (Hsinchu, Taiwan), Yao-Sheng Huang (Kaohsiung, Taiwan), Tzer-Min Shen (Hsinchu, Taiwan) and Huang-Lin Chao (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, an interfacial layer formed on the semiconductor substrate, and a high-k dielectric layer formed on the interfacial layer. At lea...