ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,210, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Bump structure and method of manufacturing bump structure" was invented by Ching-Yu Chang (Yuansun Village, Taiwan), Ming-Da Cheng (Taoyuan, Taiwan) and Ming-Hui Weng (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a bump structure includes forming a passivation layer over a substrate. A metal pad structure is formed over the substrate, wherein the passivation layer surrounds the metal pad structure. A polyimide layer including a polyimide is formed over the passivation layer and the metal pad struc...