ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,356, issued on Nov. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Stepped isolation regions" was invented by Hui Hung Kuo (Kaohsiung, Taiwan), Hsin Fu Lin (Hsinchu, Taiwan) and Hsin Heng Wang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are device with stepped isolation regions and methods for fabricating the same. An exemplary method includes forming mask segments over a semiconductor material; etching the semiconductor material to form first trenches, wherein the first trenches have a first trench maximum width and a first trench depth; forming a coating in the first trenches, w...