US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 11 for "Shallow trench isolation forming method and structures resulting therefrom" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,742, issued on Nov. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Shallow trench isolation forming method and structures resulting therefrom" was invented by Szu-Ying Chen (Hsinchu, Taiwan), Sen-Hong Syue (Zhubei, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first plurality of fins in a first region of a substrate, a first recess being interposed between adjacent fins in the first region of the substrate, the first recess having a first depth and a first width, forming a second plurality of fins in a second r...