US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 11 for "Semiconductor structure having multiple dielectric waveguide channels and method for forming semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,805, issued on Nov. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure having multiple dielectric waveguide channels and method for forming semiconductor structure" was invented by Wen-Shiang Liao (Miaoli County, Taiwan) and Huan-Neng Chen (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor structure includes: providing a first inter-level dielectric (ILD) layer overlying a molding layer, the molding layer including a transmitter ground structure and a receiver ground structure; forming first openings through the first ILD layer to expose th...