US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 11 for "Semiconductor structure having dielectric plugs penetrating through a polymer layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,806, issued on Nov. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure having dielectric plugs penetrating through a polymer layer" was invented by Shih-Ming Chen (Jhunan Township, Taiwan) and Ching-Tien Su (Chiayi, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a plurality of metal pads over a semiconductor substrate of a wafer, forming a passivation layer covering the plurality of metal pads, patterning the passivation layer to reveal the plurality of metal pads, forming a first polymer layer over the passivation layer, formi...