US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 11 for "Semiconductor structure and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,358, issued on Nov. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure and method of manufacturing the same" was invented by Yuan-Sheng Huang (Taichung, Taiwan) and Ryan Chia-Jen Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes: receiving a substrate; depositing a first gate layer over the substrate; patterning the first gate layer to form a first gate stack and leaving at least one void exposed from a sidewall of the first gate stack; depositing a dielectric layer on the sidewall of the first gate stack; and removing a first portion of the dielectric ...