US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 11 for "Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,311, issued on Nov. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layer" was invented by Yen-Ru Lee (Hsinchu, Taiwan), Chii-Horng Li (Hsinchu County, Taiwan), Chien-I Kuo (Hsinchu County, Taiwan), Heng-Wen Ting (Pingtung County, Taiwan), Jung-Chi Tai (Taipei, Taiwan), Lilly Su (Hsinchu County, Taiwan) and Yang-Tai Hsiao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first semiconductor fin, a second semiconductor fin, a source/drain epitaxial structure, a s...