US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 11 for "Semiconductor device including spacers on sides of dielectric structure and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,315, issued on Nov. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device including spacers on sides of dielectric structure and manufacturing method thereof" was invented by Chih-Hao Wang (Baoshan Township, Taiwan), Chun-Yuan Chen (Hsinchu, Taiwan), Huan-Chieh Su (Tianzhong Township, Taiwan), Sheng-Tsung Wang (Hsinchu, Taiwan), Lo-Heng Chang (Hsinchu, Taiwan) and Kuo-Cheng Chiang (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a FET structure is formed over a substrate, which includes a plurality of semiconductor sheets vertica...