US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 11 for "Semiconductor device having fin structure including dielectric-containing substrate with semiconductor surface and method of forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,317, issued on Nov. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device having fin structure including dielectric-containing substrate with semiconductor surface and method of forming the same" was invented by Ka-Hing Fung (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment method includes: forming a dielectric-containing substrate over a semiconductor substrate; forming a stack of first semiconductor layers and second semiconductor layers over the dielectric-containing substrate, wherein the first semiconductor layers and the second semiconductor layers have diffe...