ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,264, issued on Nov. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method of forming the same" was invented by Ming-Fa Chen (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first functional block and a second functional block. The first functional block includes a first substrate, a first device layer, a first interconnect structure and a plurality of first bonding patterns, and the first interconnect structure includes a plurality of first conductive patterns. The first bonding patterns are irregularly arranged. The second functional bloc...