ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,352, issued on Nov. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method of fabricating the same" was invented by Kuo-Chiang Tsai (Hsinchu, Taiwan), Tien-Hung Cheng (Hsinchu, Taiwan), Jeng-Ya Yeh (New Taipei, Taiwan) and Mu-Chi Chiang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a source via having a body portion and a barrier layer surrounding the body portion, and the body portion is in physical contact with the source contact. Furthermore, the barrier layer includes at least one sidewall section separating the source via from an adjac...