ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,316, issued on Nov. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Kuan-Ting Pan (Taipei, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a shallow trench isolation structure, two epitaxial structures, one or more semiconductor channel layers, a gate metal layer and a gate spacer. The shallow trench isolation structure is disposed over the substrate. The epitaxial structures are disposed over the shallow tren...