ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,361, issued on Nov. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Semiconductor device" was invented by Chia-Yuan Chang (Hsinchu, Taiwan), Xiong-Fei Yu (Hsinchu, Taiwan) and Hui-Cheng Chang (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes first and second fins, first and second hafnium oxide layers, first and second cap layers, and first and second metal gate electrodes. The first and second fins protrude above a substrate and respectively have an n-channel region and a p-channel region. The first and second hafnium oxide layers wrap around the n-channel region and t...