US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 11 for "NFET with aluminum-free work-function layer and method forming same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,342, issued on Nov. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"NFET with aluminum-free work-function layer and method forming same" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Weng Chang (Hsinchu, Taiwan), Chi On Chui (Hsinchu, Taiwan), Chun-I Wu (Taipei, Taiwan) and Huang-Lin Chao (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a dummy gate stack over a semiconductor region, forming a source/drain region on a side of the dummy gate stack, removing the dummy gate stack to form a trench, depositing a gate dielectric layer extending into the trench, depositing a meta...