US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 11 for "Multilevel non-volatile memory device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,535, issued on Nov. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multilevel non-volatile memory device and method" was invented by Kerem Akarvardar (Hsinchu, Taiwan) and Hon-Sum Philip Wong (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device includes a first terminal, a second terminal, a resistive memory device configured to have a first resistance level in a first state and a second resistance level in a second state, and a switching device including a control terminal and a current path. The resistive memory device and the current path are coupled in series b...