US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 11 for "Mid-manufacturing semiconductor wafer layer testing" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,752, issued on Nov. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Mid-manufacturing semiconductor wafer layer testing" was invented by Feng-Chien Hsieh (Pingtung County, Taiwan), Kuo-Cheng Lee (Tainan, Taiwan), Yun-Wei Cheng (Taipei, Taiwan), Chun-Hao Lin (Tainan, Taiwan) and Ting-Hao Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor wafer is disclosed. The method includes exposing the semiconductor wafer to one or more dopant species to form one or more first implant layers on the semiconductor wafer, testing one or more geometric parameter values of...