US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 11 for "Method of making a FinFET device including a step of removing a portion of a fin" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,310, issued on Nov. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of making a FinFET device including a step of removing a portion of a fin" was invented by Chia Tai Lin (Taichung, Taiwan), Yih-Ann Lin (Jhudong Township, Taiwan), An-Shen Chang (Jubei, Taiwan), Ryan Chia-Jen Chen (Chiayi, Taiwan) and Chao-Cheng Chen (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fin-type field-effect transistor (FinFET) device includes a plurality of fins formed over a substrate. The semiconductor device further includes a dielectric layer filled in a space between each fin and over a first portion ...