US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 11 for "Method for forming FinFET with source/drain regions comprising an insulator layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,744, issued on Nov. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming FinFET with source/drain regions comprising an insulator layer" was invented by Tzu-Ching Lin (Hsinchu, Taiwan) and Tuoh Bin Ng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment is a device including a first fin extending from a substrate, a first gate stack over and along sidewalls of the first fin, a first gate spacer disposed along a sidewall of the first gate stack, and a first source/drain region in the first fin and adjacent the first gate spacer. The first source/drain region including a fi...