US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 11 for "Memory devices including transistors on multiple layers" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,265, issued on Nov. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd..

"Memory devices including transistors on multiple layers" was invented by Ken-Ichi Goto (Hsinchu, Taiwan) and Cheng-Yi Wu (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a substrate, a first layer over the substrate, and a second layer over the first layer. The first layer including a first fin structure, a first gate structure that overlaps the first fin structure to form a first pass-gate transistor, and a second gate structure that is separate from the first gate structure and that overlaps the first fin structure...