US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 11 for "Memory device and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,507, issued on Nov. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and fabrication method thereof" was invented by Yu-Chao Lin (Hsinchu, Taiwan), Tung-Ying Lee (Hsinchu, Taiwan) and Shao-Ming Yu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a fabrication method thereof are provided. The memory device includes a substrate, a seed layer over the substrate, a superlattice structure in contact with the seed layer and a top electrode over the superlattice structure. The seed layer comprises carbon and silicon. The superlattice structure comprises first metal l...