ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,798, issued on Nov. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Layout to reduce noise in semiconductor devices" was invented by Chih-Chang Cheng (Hsinchu, Taiwan), Fu-Yu Chu (Hsinchu, Taiwan) and Ruey-Hsin Liu (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, a semiconductor device is provided. The semiconductor device includes an isolation structure disposed in a semiconductor substrate, where an inner perimeter of the isolation structure demarcates a device region of the semiconductor substrate. A gate is disposed over the device region, where an outer perimeter of the ga...