US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 11 for "Integrated circuit and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,786, issued on Nov. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Integrated circuit and method for forming the same" was invented by Chih-Liang Chen (Hsinchu, Taiwan) and Li-Chun Tien (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a gate structure, source/drain structures, a backside via, and a power rail. The gate structure extends along a first direction parallel with a front-side surface of the substrate. The backside via extends along a second direction parallel with the front-side surface of the substrate but perpendicular to the first direc...