US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 11 for "High ESD immunity field-effect device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,387, issued on Nov. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"High ESD immunity field-effect device and manufacturing method thereof" was invented by Yu-Hung Yeh (Hsinchu, Taiwan), Wun-Jie Lin (Hsinchu, Taiwan) and Jam-Wem Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus for providing electrostatic discharge (ESD) immunity and a method for fabricating the same are disclosed herein. The apparatus comprises a field effect transistor (FET) formed on a semiconductor substrate in a front-end-of-line (FEOL) layer during an FEOL process, a metal interconnect layer formed on top o...