US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 11 for "Ferroelectric tunnel junction devices with a sparse seed layer and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,299, issued on Nov. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric tunnel junction devices with a sparse seed layer and methods for forming the same" was invented by Han-Jong Chia (Hsinchu, Taiwan) and Mauricio Manfrini (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, transistor, and methods of making the same, the memory device including a memory cell including: a bottom electrode layer; a high-k dielectric layer disposed on the bottom electrode layer; a discontinuous seed structure comprising discrete particles of a metal disposed on the high-k dielectric layer; a f...