ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,466,727, issued on Nov. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Extended acid etch for oxide removal" was invented by Hong-Ta Kuo (Hsinchu County, Taiwan), I-Shi Wang (Tainan, Taiwan), Tzu-Ping Yang (Hsinchu, Taiwan), Hsing-Yu Wang (Hsinchu, Taiwan), Shu-Han Chao (Hsinchu, Taiwan), Hsi-Cheng Hsu (Taichung, Taiwan), Yin-Tun Chou (Hsinchu, Taiwan), Yuan-Hsin Chi (Longjing Township, Taiwan) and Sheng-Yuan Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A preclean process may be omitted from a eutectic bonding sequence. To remove oxide from one or more surfaces of a device wafer of a micro-elec...