US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 11 for "Dry etching of semiconductor structures with fluorine-containing gases" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,344, issued on Nov. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dry etching of semiconductor structures with fluorine-containing gases" was invented by Tze-Chung Lin (Hsinchu, Taiwan), Han-Yu Lin (Nantou County, Taiwan), Fang-Wei Lee (Hsinchu, Taiwan), Li-Te Lin (Hsinchu, Taiwan) and Pinyen Lin (Rochester, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a method that includes forming a fin structure with a stacked fin portion on a substrate. The stacked fin portion includes a first semiconductor layer and a second semiconductor layer, in which the second semiconductor layer...