US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 11 for "Conductive structures with bottom-less barriers and liners" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,745, issued on Nov. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Conductive structures with bottom-less barriers and liners" was invented by Shu-Cheng Chin (Hsinchu, Taiwan), Ming-Yuan Gao (Hsinchu, Taiwan), Chun-kai Chang (Hsinchu, Taiwan), Chen-Yi Niu (Taipei, Taiwan), Hsin-Ying Peng (Hsinchu, Taiwan), Chi-Feng Lin (Hsinchu, Taiwan) and Hung-Wen Su (Jhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A blocking material is selectively deposited on a bottom surface of a back end of line (BEOL) conductive structure such that a barrier layer is selectively deposited on sidewalls of the BEOL conductive ...