US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 11 for "Barrier layer for contact structures of semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,708, issued on Nov. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Barrier layer for contact structures of semiconductor devices" was invented by Hsin-Hsiang Tseng (Changhua County, Taiwan), Chi-Ruei Yeh (New Taipei, Taiwan) and Tsung-Yu Chiang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor device with a diffusion barrier layer on source/drain (S/D) contact structures and a method of fabricating the semiconductor device. The method of fabricating the semiconductor device includes forming a S/D region on a fin structure, forming a S/D contact str...