US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 6 for "Semiconductor structure including discharge structures and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,918, issued on May 6, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure including discharge structures and method for fabricating the same" was invented by Yao-Jen Tsai (Kaohsiung, Taiwan), Keng-Hui Liao (Kaohsiung, Taiwan), Chih-Kai Yang (Taichung, Taiwan), Chih-Fu Chang (Pingtung County, Taiwan), Chia-Jen Leu (Tainan, Taiwan) and Chin-Yuan Ko (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a substrate of a first conductivity type, the substrate including a first circuit region and a second circuit region; forming a first well region of a second co...